Trend to equilibrium of electron gas in a semiconductor according to the Boltzmann equation
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Publication:4261142
DOI10.1080/00411459808205642zbMath0940.76087OpenAlexW2044160963MaRDI QIDQ4261142
Publication date: 19 July 2000
Published in: Transport Theory and Statistical Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/00411459808205642
relaxation to equilibriumCauchy problemintegral operatorcrystal latticecollision operatorlinear Boltzmann equationsemiconductor electron gasspace homogeneous solution
Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of semiconductors (82D37)
Related Items (6)
New generation theorems in transport theory ⋮ Existence and uniqueness of positive solutions to a linear transport equation in a metric space ⋮ The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation ⋮ Space homogeneous solutions of the linear semiconductor Boltzmann equation ⋮ The linear Boltzmann equation with inelastic scattering ⋮ High field mobility and diffusivity of an electron gas in silicon devices
Cites Work
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- Existence and uniqueness of positive solutions to a linear transport equation in a metric space
- Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors
- Space Homogeneous Solutions to the Cauchy Problem for Semiconductor Boltzmann Equations
- RELAXATION TIME APPROXIMATION FOR ELECTRON-PHONON INTERACTION IN SEMICONDUCTORS
- Laser field effects on plasma transport equations
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