RELAXATION TIME APPROXIMATION FOR ELECTRON-PHONON INTERACTION IN SEMICONDUCTORS

DOI10.1142/S0218202595000309zbMATH Open0832.65142OpenAlexW2078471298MaRDI QIDQ4847358FDOQ4847358

Authors: Peter Alexander Markowich, Christian Schmeiser 

Publication date: 20 September 1995

Published in: M\(^3\)AS. Mathematical Models \& Methods in Applied Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0218202595000309

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zbMATH Keywords

scatteringBoltzmann equationintegral operatorkinetic modelsperiodic functionshydrodynamic limitsdrift-diffusion modelthermal equilibriumelectron-phonon interactionMaxwellian distributionstransport of electronssemiconductor crystalparabolic band approximationrelaxation time model

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Integro-partial differential equations (45K05) Numerical methods for integral equations (65R20) Integral equations of the convolution type (Abel, Picard, Toeplitz and Wiener-Hopf type) (45E10)

Cited In (8)

• MATHEMATICAL PROPERTIES OF INELASTIC SCATTERING MODELS IN LINEAR KINETIC THEORY
• Title not available (Why is that?)
• On Well-Posedness of a Boltzmann-Like Semiconductor Model
• Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley
• Diffusion limits of the linear boltzmann equation in extended kinetic theory: Weak and strong inelastic collisions
• Trend to equilibrium of electron gas in a semiconductor according to the Boltzmann equation
• CONSERVATIVE AND NON-CONSERVATIVE BOLTZMANN-TYPE MODELS OF SEMICONDUCTOR THEORY
• ELASTIC AND DRIFT–DIFFUSION LIMITS OF ELECTRON–PHONON INTERACTION IN SEMICONDUCTORS

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