RELAXATION TIME APPROXIMATION FOR ELECTRON-PHONON INTERACTION IN SEMICONDUCTORS

DOI10.1142/S0218202595000309zbMath0832.65142OpenAlexW2078471298MaRDI QIDQ4847358

Peter Alexander Markowich, Christian Schmeiser

Publication date: 20 September 1995

Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0218202595000309

zbMATH Keywords

scatteringthermal equilibriumintegral operatorBoltzmann equationdrift-diffusion modelelectron-phonon interactionkinetic modelsperiodic functionshydrodynamic limitsMaxwellian distributionstransport of electronssemiconductor crystalparabolic band approximationrelaxation time model

Mathematics Subject Classification ID

Numerical methods for integral equations (65R20) Integro-partial differential equations (45K05) Technical applications of optics and electromagnetic theory (78A55) Integral equations of the convolution type (Abel, Picard, Toeplitz and Wiener-Hopf type) (45E10)

Related Items (6)

Trend to equilibrium of electron gas in a semiconductor according to the Boltzmann equation ⋮ MATHEMATICAL PROPERTIES OF INELASTIC SCATTERING MODELS IN LINEAR KINETIC THEORY ⋮ Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley ⋮ On Well-Posedness of a Boltzmann-Like Semiconductor Model ⋮ Diffusion limits of the linear boltzmann equation in extended kinetic theory: Weak and strong inelastic collisions ⋮ CONSERVATIVE AND NON-CONSERVATIVE BOLTZMANN-TYPE MODELS OF SEMICONDUCTOR THEORY

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