Trend to equilibrium of electron gas in a semiconductor according to the Boltzmann equation

DOI10.1080/00411459808205642zbMath0940.76087MaRDI QIDQ4261142

Armando Majorana

Publication date: 19 July 2000

Published in: Transport Theory and Statistical Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1080/00411459808205642

zbMATH Keywords

relaxation to equilibrium; Cauchy problem; integral operator; crystal lattice; collision operator; linear Boltzmann equation; semiconductor electron gas; space homogeneous solution

Mathematics Subject Classification ID

76P05: Rarefied gas flows, Boltzmann equation in fluid mechanics

82D37: Statistical mechanics of semiconductors

Related Items

Space homogeneous solutions of the linear semiconductor Boltzmann equation, New generation theorems in transport theory, Existence and uniqueness of positive solutions to a linear transport equation in a metric space, The linear Boltzmann equation with inelastic scattering, The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation, High field mobility and diffusivity of an electron gas in silicon devices

Cites Work

• Existence and uniqueness of positive solutions to a linear transport equation in a metric space
• Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors
• Space Homogeneous Solutions to the Cauchy Problem for Semiconductor Boltzmann Equations
• RELAXATION TIME APPROXIMATION FOR ELECTRON-PHONON INTERACTION IN SEMICONDUCTORS
• Laser field effects on plasma transport equations
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