The Drift–Diffusion Limit for Electron–Phonon Interaction in Semiconductors

DOI10.1142/S0218202597000384zbMath0884.45006MaRDI QIDQ4353981

Peter Alexander Markowich, Christian Schmeiser

Publication date: 18 March 1998

Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)

zbMATH Keywords

scatteringelectron-phonon interactionsemiconductor Boltzmann equationdrift-diffusion limitsemiconductor crystal

Mathematics Subject Classification ID

Integro-partial differential equations (45K05) Statistical mechanics of solids (82D20)

Related Items (10)

INTERPLAY OF ELASTIC AND INELASTIC SCATTERING OPERATORS IN EXTENDED KINETIC MODELS AND THEIR HYDRODYNAMIC LIMITS: REFERENCE MANUAL ⋮ MATHEMATICAL PROPERTIES OF INELASTIC SCATTERING MODELS IN LINEAR KINETIC THEORY ⋮ A review of hydrodynamical models for semiconductors: Asymptotic behavior ⋮ New generation theorems in transport theory ⋮ Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley ⋮ The Existence of Moments of Solutions to Transport Equations with Inelastic Scattering and their Application in the Asymptotic Analysis ⋮ On Well-Posedness of a Boltzmann-Like Semiconductor Model ⋮ Space homogeneous solutions of the linear semiconductor Boltzmann equation ⋮ CONSERVATIVE AND NON-CONSERVATIVE BOLTZMANN-TYPE MODELS OF SEMICONDUCTOR THEORY ⋮ An energy-transport model for semiconductors derived from the Boltzmann equation.

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