A novel approach to hedge and compensate the critical dimension variation of the developed-and-etched circuit patterns for yield enhancement in semiconductor manufacturing (Q337307)

From MaRDI portal
Revision as of 15:46, 9 December 2024 by Import241208061232 (talk | contribs) (Normalize DOI.)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)





scientific article
Language Label Description Also known as
English
A novel approach to hedge and compensate the critical dimension variation of the developed-and-etched circuit patterns for yield enhancement in semiconductor manufacturing
scientific article

    Statements

    A novel approach to hedge and compensate the critical dimension variation of the developed-and-etched circuit patterns for yield enhancement in semiconductor manufacturing (English)
    0 references
    0 references
    0 references
    10 November 2016
    0 references
    critical dimension
    0 references
    yield enhancement
    0 references
    tool affinity
    0 references
    tool dispatching
    0 references
    feed-forward control
    0 references
    run-to-run (R2R)
    0 references
    manufacturing intelligence
    0 references

    Identifiers