Pages that link to "Item:Q1939398"

The following pages link to Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398):

Displaying 16 items.

• Entropy principle and recent results in non-equilibrium theories (Q294284) (← links)
• A new formula for thermal conductivity based on a hierarchy of hydrodynamical models (Q301758) (← links)
• Electron transport in silicon nanowires having different cross-sections (Q325586) (← links)
• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
• Existence and uniqueness for a two-temperature energy-transport model for semiconductors (Q508977) (← links)
• Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire (Q738065) (← links)
• A new approach to numerical simulation of charge transport in double gate-MOSFET (Q2008027) (← links)
• An improved 2D-3D model for charge transport based on the maximum entropy principle (Q2201622) (← links)
• Hydrodynamical model for charge transport in graphene (Q2254908) (← links)
• Quantum corrected hydrodynamic models for charge transport in graphene (Q2334334) (← links)
• A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo (Q2397192) (← links)
• A hydrodynamic model for silicon semiconductors including crystal heating (Q4594545) (← links)
• Assessment of the Constant Phonon Relaxation Time Approximation in Electron–Phonon Coupling in Graphene (Q5029223) (← links)
• Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires (Q5066114) (← links)
• Monte Carlo Analysis of Thermal Effects in Monolayer Graphene (Q5068060) (← links)
• Charge Transport in Graphene including Thermal Effects (Q5346790) (← links)