Pages that link to "Item:Q2276056"
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The following pages link to Hierarchy of semiconductor equations: relaxation limits with initial layers for large initial data. (Q2276056):
Displayed 8 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- Existence and uniqueness for a two-temperature energy-transport model for semiconductors (Q508977) (← links)
- Bifurcation analysis of the Degond-Lucquin-Desreux-Morrow model for gas discharge (Q2293701) (← links)
- Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model (Q5066291) (← links)
- Uniform estimates and uniqueness of stationary solutions to the drift–diffusion model for semiconductors (Q5227756) (← links)
- Large data solutions to the viscous quantum hydrodynamic model with barrier potential (Q5741667) (← links)
- Time‐periodic flows of electrons and holes in semiconductor devices (Q6067279) (← links)
- Structural Stability of Radial Interior Subsonic Steady-States to n-D Euler-Poisson System of Semiconductor Models with Sonic Boundary (Q6144602) (← links)