Pages that link to "Item:Q2496733"
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The following pages link to Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices (Q2496733):
Displaying 13 items.
- Quasineutral limit of bipolar quantum hydrodynamic model for semiconductors (Q537629) (← links)
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions (Q615977) (← links)
- The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions (Q936580) (← links)
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile (Q960886) (← links)
- Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation (Q1006100) (← links)
- Quasineutral limit of the electro-diffusion model arising in electrohydrodynamics (Q1018378) (← links)
- Vanishing cross-diffusion limit in a Keller-Segel system with additional cross-diffusion (Q1985821) (← links)
- Quasi-neutral limit and the initial layer problem of the electro-diffusion model arising in electro-hydrodynamics (Q2025420) (← links)
- Quasi-neutral limit and the initial layer problem of the drift-diffusion model (Q2151507) (← links)
- Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities (Q2165001) (← links)
- Quasi-neutral limit and the boundary layer problem of Planck-Nernst-Poisson-Navier-Stokes equations for electro-hydrodynamics (Q2420521) (← links)
- Quantum Semiconductor Models (Q2904898) (← links)
- GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL (Q3521666) (← links)
