Pages that link to "Item:Q2902820"
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The following pages link to Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle (Q2902820):
Displaying 5 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- Diffusive limit of the two-band \(k\cdot p\) model for semiconductors (Q967679) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- A hierarchy of macroscopic models for phonon transport in graphene (Q2140754) (← links)
- An improved 2D-3D model for charge transport based on the maximum entropy principle (Q2201622) (← links)
