Pages that link to "Item:Q3156132"

The following pages link to Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132):

Displayed 7 items.

• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) ‎ (← links)
• Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire (Q738065) ‎ (← links)
• A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) ‎ (← links)
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) ‎ (← links)
• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272) ‎ (← links)
• Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model (Q2945469) ‎ (← links)
• A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices (Q5707802) ‎ (← links)