Pages that link to "Item:Q4012470"
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The following pages link to Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity (Q4012470):
Displayed 16 items.
- Recovery of an interface from boundary measurement in an elliptic differential equation (Q421367) (← links)
- Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices (Q462766) (← links)
- A uniqueness theorem for an inverse boundary value problem in two dimensions (Q697447) (← links)
- Second-order approach to optimal semiconductor design (Q946295) (← links)
- Identification of contact regions in semiconductor transistors by level-set methods (Q1414315) (← links)
- Numerical identification of a sparse Robin coefficient (Q2017606) (← links)
- On a logarithmic stability estimate for an inverse heat conduction problem (Q2329688) (← links)
- Inversion of Robin coefficient by a spectral stochastic finite element approach (Q2478500) (← links)
- The boundary element method for the numerical recovery of a circular inhomogeneity in an elliptic equation (Q2486524) (← links)
- Analysis of an Adaptive Finite Element Method for Recovering the Robin Coefficient (Q2954469) (← links)
- Fast Bayesian approach for parameter estimation (Q3590412) (← links)
- RECONSTRUCTION ALGORITHMS OF AN INVERSE COEFFICIENT IDENTIFICATION PROBLEM FOR THE SCHRODINGER EQUATION (Q5015459) (← links)
- Numerical methods for piecewise constant Robin coefficient (Q5205289) (← links)
- Numerical reconstruction of an inhomogeneity in an elliptic equation (Q5496495) (← links)
- Reconstruction of contact regions in semiconductor transistors using Dirichlet-Neumann cost functional approach (Q5856186) (← links)
- Stability estimate for an inverse problem of a hyperbolic heat equation from boundary measurement (Q6099754) (← links)