Pages that link to "Item:Q4672394"
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The following pages link to Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle (Q4672394):
Displayed 5 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- An energy transport model describing heat generation and conduction in silicon semiconductors (Q637525) (← links)
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC (Q1928085) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)