Pages that link to "Item:Q534826"
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The following pages link to A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands (Q534826):
Displaying 11 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands (Q534826) (← links)
- An energy transport model describing heat generation and conduction in silicon semiconductors (Q637525) (← links)
- 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle (Q658896) (← links)
- Boltzmann's six-moment one-dimensional nonlinear system equations with the Maxwell-Auzhan boundary conditions (Q670268) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- A new approach to numerical simulation of charge transport in double gate-MOSFET (Q2008027) (← links)
- An improved 2D-3D model for charge transport based on the maximum entropy principle (Q2201622) (← links)
- A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation (Q2878027) (← links)
- A hydrodynamic model for silicon semiconductors including crystal heating (Q4594545) (← links)
