Pages that link to "Item:Q870557"

The following pages link to 2D numerical simulation of the MEP energy-transport model with a finite difference scheme (Q870557):

Displayed 13 items.

• Semiconductor device design using the \textsc{BiMADS} algorithm (Q401540) ‎ (← links)
• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) ‎ (← links)
• Local-in-time well-posedness of a regularized mathematical model for silicon MESFET (Q638709) ‎ (← links)
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle (Q658896) ‎ (← links)
• Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119) ‎ (← links)
• A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) ‎ (← links)
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) ‎ (← links)
• Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors (Q2892174) ‎ (← links)
• Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle (Q2902820) ‎ (← links)
• Energy transport in semiconductor devices (Q2929098) ‎ (← links)
• On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel (Q3082245) ‎ (← links)
• Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle (Q3544555) ‎ (← links)
• On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor (Q5413122) ‎ (← links)