3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES

DOI10.1108/EB010086MaRDI QIDQ3990351zbMATH OpenOpenAlexFDO

Authors A. I. Adamsone, B. S. Pol'skij

Publication date 28 June 1992

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb010086

zbMATH Keywords

3D numerical simulationabsolute stabilitybipolar transistorcharge transportcontinuity equationsNumerical resultsPoisson equationsemi-implicit schemesubmicron semiconductor devices

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Finite difference methods for boundary value problems involving PDEs (65N06) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Applications to the sciences (65Z05) Motion of charged particles (78A35) Technical applications of optics and electromagnetic theory (78A55)

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