A drift-diffusion model for semiconductors with temperature effects

DOI10.1017/S0308210507001187MaRDI QIDQ3643340zbMATH OpenOpenAlexFDO

Authors Xiangsheng Xu

Publication date 11 November 2009

Published in Proceedings of the Royal Society of Edinburgh: Section A Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1017/s0308210507001187

zbMATH Keywords

mixed boundary value problemdrift-diffusion modeltemperature effectselectrothermal phenomena

Mathematics Subject Classification ID

Navier-Stokes equations (35Q30) Nonlinear boundary value problems for linear elliptic equations (35J65) Diffusion (76R50) Magnetohydrodynamics and electrohydrodynamics (76W05) Theoretical approximation in context of PDEs (35A35)

Recommendations

• On the \(N\)-dimensional stationary drift-diffusion semiconductor equations
• scientific article; zbMATH DE number 736454
• scientific article; zbMATH DE number 671838
• Existence of weak solutions to a degenerate time-dependent semiconductor equations with temperature effect
• scientific article; zbMATH DE number 641592

Cited in

(6)

• scientific article; zbMATH DE number 978586 (Why is no real title available?)
• Existence analysis for a simplified transient energy-transport model for semiconductors
• Asymptotic behavior of the drift-diffusion semiconductor equations
• scientific article; zbMATH DE number 671838 (Why is no real title available?)
• Global existence analysis for degenerate energy-transport models for semiconductors
• Boundedness of solutions to a time-dependent semiconductor model

This page was built for publication: A drift-diffusion model for semiconductors with temperature effects

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3643340)