Accuracy errors of modeling of MIS-transistor sensor elements

DOI10.1134/S0005117920100094MaRDI QIDQ828518zbMATH OpenOpenAlexFDO

Authors B. I. Podlepetsky

Publication date 9 January 2021

Published in Automation and Remote Control (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1134/s0005117920100094

zbMATH Keywords

modelsapproximationserrors of modelsMIS transistor

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Statistical mechanics of semiconductors (82D37)

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Cites work

• Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics
• Modeling of radiation sensitivity of hydrogen sensors based on MISFET
• Radiation sensitivity modeling technique of sensors' MIS-transistor elements

Cited in

(6)

• Methodic errors of microelectromechanical pressure sensors in isotropic modeling of the elastic properties of single-crystal silicon
• Radiation sensitivity modeling technique of sensors' MIS-transistor elements
• Modeling of radiation sensitivity of hydrogen sensors based on MISFET
• Some consequences of sensor error in a model for passive detection
• Methods and tools for evaluating the characteristics of MIS-capacitor gas sensors
• Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics

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