An approach to decrease dimensions of field-effect transistors without p-n-junctions

DOI10.1142/S0217979214501902MaRDI QIDQ2934145zbMATH OpenFDO

Authors E. L. Pankratov, E. A. Bulaeva

Publication date 8 December 2014

Published in International Journal of Modern Physics B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/S0217979214501902

zbMATH Keywords

analytical approach to model transistorsdecreasing of dimensions of transistorsfield-effect transistorsoptimization of technological process

Mathematics Subject Classification ID

PDEs in connection with statistical mechanics (35Q82) Statistical mechanics of semiconductors (82D37)

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(3)

• Low-dimensional light-emitting transistor with tunable recombination zone
• On the control of transport of a medicinal product in an organism
• On approach for analysis of distribution of temperature during radiation processing of biological tissues

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