Collocation methods and error analyses for the semiconductor problem
collocation methodDirichlet initial boundary value problemelectron and hole equationsenergy estimatesoptimal error estimatessemiconductor model
PDEs in connection with optics and electromagnetic theory (35Q60) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Spectral, collocation and related methods for initial value and initial-boundary value problems involving PDEs (65M70) Statistical mechanics of semiconductors (82D37)
The author uses collocation methods to study the numerical approximation of the Dirichlet initial boundary value problem for a semiconductor model in \(\mathbb{R}^n\) consisting of the electron and hole equations [cf. \textit{R. E. Bank}, \textit{W. M. Fichtner, D. J. Rose}, et al., IEEE Computer Aided Design 6, 436-451 (1985)] for the physical background of the model]. Assuming that the solutions are sufficiently smooth and that \(\Delta t=o(h^{n/2})\), and applying energy estimates and the discrete Gronwall's inequality, the author gives the optimal error estimate in \(L^2\)-norm.
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- scientific article; zbMATH DE number 1916986
- Error Estimates for a Finite Element Method for the Drift Diffusion Semiconductor Device Equations
- scientific article; zbMATH DE number 1322295
- On the nonlinear Boltzmann equation of the carrier transport in semiconductors. II: Numerical approximation of solutions
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