Design of a two-bit-per-cell content addressable memory using singe-electron transistors

MaRDI QIDQ5446444zbMATH OpenFDO

Authors Katsuhiko Degawa, Tatsuo Higuchi, Hiroshi Inokawa, Yasuo Takahashi, Takafumi Aoki

Publication date 6 March 2008

Mathematics Subject Classification ID

Information storage and retrieval of data (68P20)

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(2)

• Design and implementation of a sequence generator using single electron device based threshold logic gates
• Content-addressable memory core cells A survey

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