Diffusion in a strained cubic crystal

DOI10.1007/S10665-010-9361-4MaRDI QIDQ718962zbMATH OpenOpenAlexFDO

Authors Martin G. Meere, J. R. King

Publication date 27 September 2011

Published in Journal of Engineering Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/s10665-010-9361-4

zbMATH Keywords

discrete elasticityimpurity concentrationstress effect

Mathematics Subject Classification ID

Crystalline structure (74E15) Finite difference methods applied to problems in solid mechanics (74S20)

Recommendations

• Impurity diffusion through strained semiconductors
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Cites work

• scientific article; zbMATH DE number 5145091 (Why is no real title available?)
• scientific article; zbMATH DE number 3084323 (Why is no real title available?)
• Discrete crystal elasticity and discrete dislocations in crystals
• Impurity diffusion through strained semiconductors
• The Art of Molecular Dynamics Simulation

Cited in

(5)

• scientific article; zbMATH DE number 2021872 (Why is no real title available?)
• The diffusion of intersitial atoms in uniformly strained solid solutions \(A - (C)\) with a bcc lattice
• Impurity diffusion through strained semiconductors
• Elastic deformation in a crystal plate where lattice–parameter mismatch is present between adjacent growth sectors. I. Anisotropic elasticity theory, with application to lattice-parameter measurements
• Strain distributions and diffraction peak profiles from crystals with dislocations

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