Efficient deterministic parallel simulation of 2D semiconductor devices based on WENO-Boltzmann schemes

DOI10.1016/J.CMA.2008.10.003MaRDI QIDQ658164zbMATH OpenOpenAlexFDO

Authors José Miguel Mantas, Maria José Cáceres

Publication date 11 January 2012

Published in Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.cma.2008.10.003

zbMATH Keywords

parallel numerical algorithmsfinite difference weighted essentially non-oscillatory schemeshigh performance cluster computingsemiconductor simulation

Mathematics Subject Classification ID

Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Statistical mechanics of semiconductors (82D37)

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Cites work

• scientific article; zbMATH DE number 1302036 (Why is no real title available?)
• scientific article; zbMATH DE number 591705 (Why is no real title available?)
• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• A distributed memory parallel element-by-element scheme for semiconductor device simulation
• Deterministic kinetic solvers for charged particle transport in semiconductor devices
• Efficient implementation of weighted ENO schemes
• Graphics processor units: new prospects for parallel computing
• LAPACK Users' Guide
• Multidomain WENO finite difference method with interpolation at subdomain interfaces
• Parallelization of WENO-Boltzmann schemes for kinetic descriptions of 2D semiconductor devices
• Resolution of high order WENO schemes for complicated flow structures.
• Total variation diminishing Runge-Kutta schemes

Cited in

(5)

• Parallelization of WENO-Boltzmann schemes for kinetic descriptions of 2D semiconductor devices
• A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
• A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
• Parallel parameter study of the Wigner-Poisson equations for RTDs

Describes a project that uses

Uses Software

• WENO
• LAPACK

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