Explicit modelling of the double-gate MOSFET with VHDL-AMS

DOI10.1002/JNM.609MaRDI QIDQ5471038zbMATH OpenOpenAlexFDO

Authors Fabien Prégaldiny, François Krummenacher, Birahim Diagne, François Pêcheux, Jean Michel Sallese, Christophe Lallement

Publication date 6 June 2006

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.609

zbMATH Keywords

compact modellingDG MOSFETEKVnumerical inversionVHDL-AMS

Mathematics Subject Classification ID

Recommendations

• Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation
• Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects
• A compact model for the I-V characteristics of an undoped double-gate MOSFET
• Fourth generation MOSFET model and its VHDL-AMS implementation
• Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

Cited in

(6)

• A compact model for the I-V characteristics of an undoped double-gate MOSFET
• Planar split dual gate MOSFET
• Accurate prediction of the volume inversion impact on undoped double gate MOSFET capacitances
• Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation
• Fourth generation MOSFET model and its VHDL-AMS implementation
• Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects

This page was built for publication: Explicit modelling of the double-gate MOSFET with VHDL-AMS

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5471038)