Fourth generation MOSFET model and its VHDL-AMS implementation

DOI10.1002/JNM.560MaRDI QIDQ4651636zbMATH OpenOpenAlexFDO

Authors Fabien Prégaldiny, Christophe Lallement

Publication date 22 February 2005

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.560

zbMATH Keywords

compact modellingMOSFETquantum effectssurface potentialVHDL-AMS

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55)

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(2)

• Explicit modelling of the double-gate MOSFET with VHDL-AMS
• BSIM -- making the first international standard MOSFET model

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