Failure modes and FEM analysis of power electronic packaging

DOI10.1016/S0168-874X(01)00094-4MaRDI QIDQ5958496zbMATH OpenOpenAlexWikidataFDO

Authors Hua Ye, Minghui Lin, Cemal Basaran

Publication date 3 March 2002

Published in Finite Elements in Analysis and Design (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/s0168-874x(01)00094-4

zbMATH Keywords

electronic packagingfailure modesfinite element analysisIGBTpower electronic packagingreliability

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Review text

The development of power electronics technology is driven by the insatiate demand to control electrical power. The new power electronics devices reduce the volume of the converters by three to four orders of magnitude compared to their mercury arc predecessor. And the turn-on and turn-off time has decreased from milliseconds to the microseconds and even nanoseconds, depending on the power level. The power range commanded by converters now extends from micro-VA to several hundreds of mega-MVA. Among the new power devices, insulated gate bipolar transistor (IGBT) devices are being more accepted and increasingly used in traction application such as locomotive, elevator, tram and subway. Thus the long-term reliability of IGBT is highly demanded. In this paper the failure modes of power electronics devices especially IGBTs are reviewed. A FEM analysis of a multilayered IGBT packaging module under cyclic thermal loading is presented.

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Cited in

(9)

• Topology optimization of nonlinear heat conduction problems involving large temperature gradient
• Transient of power pulse and its sequence in power electronics
• An improved high-voltage IGBT-based half-bridge DC/DC converter for railway applications
• A feedback voltage control of insulated gate power transistors
• A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system
• A termination structure of 2.5kV IGBT with field plate and semi-resistive (SIPOS) layer
• Lifetime prediction and failure analysis of IGBT module based on accelerated lifetime test
• Real-time Prognosis of Failure of the IGBT in a Conversion Chain
• Fatigue and fracture assessment for reliability in electronics packaging

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