Finite element power diode model optimized through experiment-based parameter extraction

DOI10.1002/JNM.708MaRDI QIDQ3399226zbMATH OpenOpenAlexFDO

Authors

Publication date 29 September 2009

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.708

zbMATH Keywords

ambipolar diffusion equationdevice simulationfinite element methodmodelingoptimizationparameter extractionSPICE

Mathematics Subject Classification ID

PDEs in connection with statistical mechanics (35Q82) Numerical optimization and variational techniques (65K10) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37) Approximation methods and heuristics in mathematical programming (90C59)

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Cited in

(3)

• An iteration formulation for normalized diode characteristics
• Parasitic series resistance-independent method for device-model parameter extraction
• A novel approach to extract accurate design parameters of PiN diode

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