Physically based 2D compact model for power bipolar devices

DOI10.1002/JNM.535MaRDI QIDQ4810517zbMATH OpenOpenAlexFDO

Authors P. M. Igic, Malcolm S. Towers, P. A. Mawby

Publication date 16 August 2004

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.535

zbMATH Keywords

modellingcompact modelIGBTambipolar equationbipolar power deviceIEGT

Mathematics Subject Classification ID

Heat equation (35K05) Initial-boundary value problems for second-order parabolic equations (35K20)

Recommendations

• scientific article; zbMATH DE number 47807
• A model for abrupt double heterojunction bipolar transistors
• The compact d.c. electrothermal model of power MOSFETs for SPICE
• Physical models in device simulation of SI power pin‐diodes for optimal fitting of simulation results to measured data
• scientific article; zbMATH DE number 978488

Cited in

(7)

• A termination structure of 2.5kV IGBT with field plate and semi-resistive (SIPOS) layer
• Finite element power diode model optimized through experiment-based parameter extraction
• Stabilization and controller design of 2D discrete switched systems with state delays under asynchronous switching
• A unified framework of convex stability conditions for 2-D switched systems with stable or unstable modes
• \(\mathcal{H}_\infty\) filtering for discrete-time 2-D switched systems: an extended average dwell time approach
• Stability analysis and stabilization of 2-D switched systems under arbitrary and restricted switchings
• scientific article; zbMATH DE number 47807 (Why is no real title available?)

This page was built for publication: Physically based 2D compact model for power bipolar devices

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4810517)