scientific article; zbMATH DE number 978488

zbMATH Open0865.35126MaRDI QIDQ4332650FDOQ4332650

Authors: R. Hünlich, J. A. Griepentrog, Wilfried Röpke, Annegret Glitzky 

Publication date: 9 April 1997

Title of this publication is not available (Why is that?)

Recommendations

• Numerical analysis of abrupt heterojunction bipolar transistors
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zbMATH Keywords

numerical simulationsimulation programsmodel equationstransistorsdesign of modern nanoelectronic devices

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Motion of charged particles (78A35)

Cited In (7)

• A model for abrupt double heterojunction bipolar transistors
• DC and small-signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors
• Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications
• Physically based 2D compact model for power bipolar devices
• Title not available (Why is that?)
• An efficient algorithm for optimizing the electrical performance of HBTs
• Monte Carlo modelling of abrupt InP/InGaAs HBTs

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