A model for abrupt double heterojunction bipolar transistors

DOI10.1002/JNM.522zbMATH Open1061.78007OpenAlexW2091146241MaRDI QIDQ4458780FDOQ4458780

Authors: A. J. García-Loureiro, Juan M. Lopez-Gonzalez 

Publication date: 15 March 2004

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.522

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zbMATH Keywords

Fermi-Dirac distributionelectron transporttransistors

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Electro- and magnetostatics (78A30)

Cited In (6)

• A dc I–V model for short‐channel polygonal enclosed‐layout transistors
• Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications
• Title not available (Why is that?)
• Physically based 2D compact model for power bipolar devices
• On the design of base-collector junction of InGaAs/InP DHBT
• Monte Carlo modelling of abrupt InP/InGaAs HBTs

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