Effect of tunnel resonances on fluxon radiation loss in a long S-I-S tunnel junction with weak structural disorder in the \(I\) layer (Q1049356)

The aim of the paper is to obtain a formula for the density of the bias current that compensate the radiation loss of a fluxon moving in superconductor-insulator-superconductor (S-I-S) tunnel junction with tunnel resonances or quantum resonant percolation paths randomly formed in the disordered I layer. The bias current from an external source into the junction is necessary to provide uniform fluxon motion. It is assumed that the I layer has a weak structure disorder in the range of tunnel resonance energies. The problem is reduced to calculation of the bias current for the disordered S-I-S tunnel junction in the range of magnetic fields corresponding to the existence of a solitary fluxon in the junction. It is considered the model of S-I-S sandwich located at \(T = 0\) in a magnetic field oriented parallel to the junction plane. The equation for the phase difference between the \(S\) pieces of the junction in partial derivative form is written through dimensionless variables. Then, it is found the solution for unperturbed state corresponding to the mean-field approximation for a solitary fluxon in the energy range of tunnel resonances in the disordered I layer. The solution of the equation in dimensionless variables is determined in the form of a series in powers of small parameter. By using the Fourier transform, it is obtained the ordinary differential equation for the first term of the expansion. Its solution is searched in the form of an expansion in the operator eigenfunctions. Finally, into framework of the second order of the perturbation theory, it is obtained the equation for the second term of the expansion. Due to that the conditions considered define the main contribution from the single-admixture tunnel resonances, it is stated the formula for the bias current density.