On the inclusion of the recombination term in discretizations of the semiconductor device equations (Q1079938)

For differential equations in conservation form, considered on the unit interval (0,1) under Dirichlet boundary conditions, the author applies a Galerkin type discretization with respect to a non-uniform mesh. For an appropriate choice of the discrete trial space and the discrete test space the resulting algebraic equations can be interpreted as a system of finite difference equations in conservation form. The scheme is then applied to the stationary semiconductor device equations with recombination term, and it is shown that the discretized continuity equations are closely related to the Scharfetter-Gummel scheme while, for a uniform mesh and zero recombination term, the discretized Poisson equation reduces to a scheme of \textit{M. S. Mock} [Analysis of mathematical models of semiconductor devices (1983; Zbl 0532.65081)].