A Green-function theory of plasmons in two-dimensional semiconductor structures: Finite magnetic field (Q1283534)

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scientific article; zbMATH DE number 1275802
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    A Green-function theory of plasmons in two-dimensional semiconductor structures: Finite magnetic field
    scientific article; zbMATH DE number 1275802

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      A Green-function theory of plasmons in two-dimensional semiconductor structures: Finite magnetic field (English)
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      26 November 2000
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      The magnetoplasmon excitations in several two-dimensional semiconductor structures placed in magnetic field, are investigated in the framework of a Green-function theory. The magnetic field is assumed to be parallel to the interfaces and perpendicular to the direction of propagation (Voigt geometry). The material layers are characterized by frequency-dependent dielectric function, and the quantum-size effects are ignored. The authors derive explicit expressions for the response functions associated with electromagnetic fields. It is shown that previous well-established results can be reproduced with this theory, and that the excitation spectrum in Voigt geometry contains a magnetic-field-dependent gap within which the magnetoplasmons cannot propagate.
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      two-dimensional semiconductor structures
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      Voigt geometry
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      magnetoplasmon excitations
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      Green-function theory
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      frequency-dependent dielectric function
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      response functions
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