Uniqueness for the two-dimensional semiconductor equations in case of high carrier densities (Q1321004)

Up to now a satisfactory uniqueness result for solutions to so called drift-diffusion models of carrier transport in semiconductor devices has been proved in case of low carrier densities (where Boltzmann-statistics leads to a logarithmic dependence of the chemical potentials on the densities of electrons and holes). For the case of high carrier densities uniqueness is known only under unjustified ad hoc assumptions with respect to the smoothness of the solutions. In this paper it is shown that for spatially two-dimensional problems these ad hoc assumptions can be avoided. The results rely heavily on a regularity result for solutions to nonlinear parabolic equations in case of mixed boundary conditions proved recently by the authors.