Modeling crystal growth in a diffusion field using fully faceted interfaces (Q1335624)
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English | Modeling crystal growth in a diffusion field using fully faceted interfaces |
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Modeling crystal growth in a diffusion field using fully faceted interfaces (English)
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17 October 1994
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The authors discuss a new computational model of crystal growth in which it is assumed that the crystal is a polygon with a limited number of possible normal directions. The paper is almost entirely descriptive with very few formulae. A large number of diagrams is given which represent the results of calculations using various parameters. It is pointed out that the computer programs (not given) are written in \(C++\) so that the computer structures can closely emulate the physical structures which they represent.
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diffusion field
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fully faceted interfaces
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crystal growth
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