Phonon Raman scattering in semiconductors, quantum wells and superlattices. Basic results and applications (Q1377988)

The book starts from a brief outline of the history and development of inelastic light scattering. Then Raman scattering in semiconductor superlattices is discussed. The topics considered are the following: optic phonons in ultra-short-period superlattices where interface effects become important, optic phonons in isotopic superlattices in connection with phonon confinement, acoustic phonons in GaAs/AlAs superlattices grown along high-index crystallographic directions. Raman scattering is of great importance for the investigation of continuous emission of acoustic phonons. The relation of this phenomenon to the Raman scattering process and the corresponding new possibilities for determination of material parameters are discussed. Several topics concerning magneto-Raman scattering in bulk semiconductor and quantum wells are considered. There is a small chapter about the related phenomenon of magneto-luminescence. The book contains the description of several applications of Raman scattering for investigating bulk and low-dimensional semiconductors. Among them are the characterization of heterostructure interface quality, the determination of homogeneous and inhomogeneous broadening of electronic states, the analysis of defects and doping, the measurement of stress-profiles in silicon-based devices, investigation on damage mechanisms in quantum well lasers, etc. Nano-Raman spectroscopy and light scattering in the optical near-field regime along with the newest Raman instrumentation are considered in the final part of the book.