A mathematical model for the transient evolution of a resonant tunneling diode (Q1598452)

This note is devoted to the 1D quantum device represented by the interval \([a,b]\). The contacts \(a, b\) are linked to electron reservoirs, injecting electrons following some given profiles \(g_a(p)\), \(p\geq 0\), \(g_b(p)\), \(p\leq 0\), where \(p\) is the momentum of the injected electron. (Typically, the profiles \(g_a\) and \(g_b\) correspond to Fermi-Dirac statistics.) The authors derive a mathematical model for the self-consistent evolution of the device under various natural conditions and give existence and uniqueness results of solutions for this model.