About v-i pinched hysteresis of some non-memristive systems (Q1720476)
From MaRDI portal
!
WARNING
This is the item page for this Wikibase entity, intended for internal use and editing purposes.
Please use the normal view instead:
scientific article; zbMATH DE number 7018540
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | About v-i pinched hysteresis of some non-memristive systems |
scientific article; zbMATH DE number 7018540 |
Statements
About v-i pinched hysteresis of some non-memristive systems (English)
0 references
8 February 2019
0 references
Summary: A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.
0 references
0.7720771431922913
0 references
0.7543045878410339
0 references
0.7344688773155212
0 references
0.7291495203971863
0 references
0.7071186304092407
0 references
