Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors (Q1762241)
From MaRDI portal
| This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors |
scientific article; zbMATH DE number 6110116
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors |
scientific article; zbMATH DE number 6110116 |
Statements
Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors (English)
0 references
23 November 2012
0 references
oxygen
0 references
nitrogen dioxide
0 references
chemisorption
0 references
adsorption heat
0 references
activation energy of desorption
0 references
sensor
0 references
over-barrier conductivity
0 references
channel conductivity
0 references
0.6706504821777344
0 references
0.6636254787445068
0 references
0.6616641283035278
0 references
0.6387751698493958
0 references
0.6113232970237732
0 references