A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation (Q1765427)
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scientific article; zbMATH DE number 2137418
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| English | A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation |
scientific article; zbMATH DE number 2137418 |
Statements
A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation (English)
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23 February 2005
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parallel algorithm
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domain decomposition
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adaptive computational method
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semiconductor device simulation
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quantum correction model
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nanoscale device
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double-gate MOSFETs
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0.8079240918159485
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0.8050779700279236
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0.7653564810752869
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0.7619931101799011
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0.761002779006958
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