A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
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Cites work
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
- A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices
- A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
- A posteriori error estimation for finite-volume solutions of hyperbolic conservation laws
- Error Estimates on the Approximate Finite Volume Solution of Convection Diffusion Equations with General Boundary Conditions
- Structured and unstructured grid adaptation schemes for numerical modeling of field problems
Cited in
(18)- Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET
- An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors
- Electronic design automation using a unified optimization framework
- FETMOSS: a software tool for 2D simulation of double-gate MOSFET
- A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain
- Numerical strategies towards peta-scale simulations of nanoelectronics devices
- Parallelization of a quantum-classic hybrid model for nanoscale semiconductor devices
- An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs
- A two-dimensional thin-film transistor simulation using adaptive computing technique
- A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs
- 2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET
- Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs
- Three-dimensional quantum simulation of multigate nanowire field effect transistors
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
- Efficient simulations of the transport properties of spin field-effect transistors built on silicon fins
- A quantum corrected energy-transport model for nanoscale semiconductor devices
- Polynomial pattern finding in scattered data
- 3D stress simulations of nano transistors
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