Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET

DOI10.1016/J.CPC.2010.07.018MaRDI QIDQ546895zbMATH OpenOpenAlexFDO

Authors Yiming Li, Hui-Wen Cheng, Ming-Hung Han

Publication date 30 June 2011

Published in Computer Physics Communications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.cpc.2010.07.018

zbMATH Keywords

fluctuationmodeling and simulationquantum hydrodynamicrandom dopant

Mathematics Subject Classification ID

Quantum hydrodynamics and relativistic hydrodynamics (76Y05) Atomic physics (81V45) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

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Cites work

• A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation

Cited in

(4)

• Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode
• scientific article; zbMATH DE number 6520761 (Why is no real title available?)
• Effects of unintended dopants on I-V characteristics of the double-gate MOSFETS, a simulation study
• Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices

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