Three-dimensional quantum simulation of multigate nanowire field effect transistors

DOI10.1016/J.MATCOM.2007.10.007MaRDI QIDQ1010025zbMATH OpenOpenAlexFDO

Authors Mincheol Shin

Publication date 3 April 2009

Published in Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.matcom.2007.10.007

zbMATH Keywords

quantum simulationnon-equilibrium Green's functionsilicon nanowirefield effect transistors

Mathematics Subject Classification ID

Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Schrödinger operator, Schrödinger equation (35J10) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

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Cited in

(10)

• A two-dimensional domain decomposition technique for the simulation of quantum-scale devices
• A new approach for numerical simulation of quantum transport in double‐gate SOI
• Computational Science – ICCS 2005
• Numerical strategies towards peta-scale simulations of nanoelectronics devices
• Multiscale Analysis and Computation for a Stationary Schrödinger--Poisson System in Heterogeneous Nanostructures
• Time-dependent simulations of quantum waveguides using a time-splitting spectral method
• Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods
• A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices
• 3D stress simulations of nano transistors
• 3D quantum transport solver based on the perfectly matched layer and spectral element methods for the simulation of semiconductor nanodevices

Describes a project that uses

Uses Software

• PETSc

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