Numerical analysis of DAEs from coupled circuit and semiconductor simulation (Q1772814)

The paper is devoted to the problem of numerical solving a system of differential-algebraic equatins (DAEs) and partial differential equations (PDEs) that present an electrical circuit containing semiconductor devices. The desired functions are node potentials, currents through inductors, currents through voltage sources that are functions of time and are connected by ordinary DAE, as well as semiconductor's electrostatic potential, densities of electrons and holes that depend on time and one space variable. The last three objects are connected by PDEs consisting of the Poisson equation and continuity equations (drift-diffusion equations). The DAEs and PDEs systems are connected by boundary conditions of the potential. The Poisson equation can be replaced by the equivalent energy conservation equation. The investigated numerical method is the semi-discretization of the PDEs on the spatial variable. The resulting system is an ordinary DAE with properly stated leading term. The main results of the paper are three theorems that present structural criteria of the circuits which provides to the differentiation index of system of value 1 or 2.