Application of LBI techniques to solution of the transient, multidimensional semiconductor equation (Q1821538)

An analysis and computational procedure are developed for the solution of the coupled system of transient, multidimensional equations governing current continuity for electrons and holes, and the electrostatic potential in semiconductors. The analysis is unique in that through it the \(3\times 3\) coupled system is reduced to a \(2\times 2\) coupled, parabolic system, the continuity equations, and a scalar, elliptic equation, Poisson's equation, which are solved sequentially without introducing stability restrictions or iteration. The coupled continuity equations are integrated through implementation of an LBI algorithm followed by solution for the electrostatic potential using a scalar ADI procedure. The stability and accuracy of the method are explored in one- dimension followed by application to a three-dimensional transient charge collection simulation.