A quasistationary limit and convergence to equilibrium in the drift diffusion system for semiconductors coupled with Maxwell's equations (Q1848290)

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scientific article; zbMATH DE number 1832826
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    A quasistationary limit and convergence to equilibrium in the drift diffusion system for semiconductors coupled with Maxwell's equations
    scientific article; zbMATH DE number 1832826

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      A quasistationary limit and convergence to equilibrium in the drift diffusion system for semiconductors coupled with Maxwell's equations (English)
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      26 May 2003
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      The transient drift-diffusion model describing the charge transport in semiconductors is investigated in the case the currents are prescribed. The author proves existence of weak solutions for the drift-diffusion system coupled with Maxwell's equations, in the case of non constant coefficients and inhomogeneous boundary conditions. Moreover, its solutions converge to the solution of the drift-diffusion system coupled with Poisson's equation if the magnetic susceptibility tends to zero. Furthermore it is shown that the densities converge to the thermal equilibrium state for \(t\rightarrow\infty\) provided that the boundary conditions are compatible with the thermal equilibrium.
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      drift diffusion model
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      currents prescribed
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      existence and uniqueness
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