An asymptotic analysis of the kick-out diffusion mechanism (Q1898024)

The kick-out model for the diffusion of impurity in III--V semiconductors is studied. Asymptotic solutions are derived for one- and two-dimensional surface source problems. A mechanism for the destruction of self- interstitials, for 1D case, is given. The calculated diffusion profiles have shapes which are typical. For the 2D case, contours of constant impurity concentration are calculated and some are found to have the ``bird's beak'' shape, which is frequently observed in experiments.