On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier (Q1998491)
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scientific article; zbMATH DE number 7318306
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| English | On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier |
scientific article; zbMATH DE number 7318306 |
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On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier (English)
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6 March 2021
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4H-polytype silicon carbide
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junction barrier Schottky diodes
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potential barrier
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analytical model
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