On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier

DOI10.1016/J.MATCOM.2020.07.008MaRDI QIDQ1998491zbMATH OpenOpenAlexFDO

Authors Luigi Di Benedetto, Gian Domenico Licciardo, Alfredo Rubino

Publication date 6 March 2021

Published in Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.matcom.2020.07.008

zbMATH Keywords

analytical modelpotential barrier4H-polytype silicon carbidejunction barrier Schottky diodes

Mathematics Subject Classification ID

General and miscellaneous specific topics (00Axx)

Cites work

• Handbook of mathematics for engineers and scientists

Cited in

(1)

• Special issue ELECTRIMACS 2019 energy modelling and computational simulation for control and diagnosis in renewable energy systems, energy storage, innovative devices and materials

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