On the multiplicative degree-based topological indices of silicon-carbon \(Si_2C_{3^-}I[p,q]\) and \(Si_{2}C_{3^-}II[p,q]\) (Q2333643)

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On the multiplicative degree-based topological indices of silicon-carbon \(Si_2C_{3^-}I[p,q]\) and \(Si_{2}C_{3^-}II[p,q]\)
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    On the multiplicative degree-based topological indices of silicon-carbon \(Si_2C_{3^-}I[p,q]\) and \(Si_{2}C_{3^-}II[p,q]\) (English)
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    13 November 2019
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    Summary: The application of graph theory in chemical and molecular structure research has far exceeded people's expectations, and it has recently grown exponentially. In the molecular graph, atoms are represented by vertices and bonds by edges. Topological indices help us to predict many physico-chemical properties of the concerned molecular compound. In this article, we compute Generalized first and multiplicative Zagreb indices, the multiplicative version of the atomic bond connectivity index, and the Generalized multiplicative Geometric Arithmetic index for silicon-carbon \(S i_2 C_{3^-} I [p, q]\) and \(S i_2 C_{3^-}II [p, q]\) second.
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    molecular graph
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    degree-based index
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    silicon-carbon
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