Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices (Q3418211)
From MaRDI portal
 | This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices |
scientific article; zbMATH DE number 5121325
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices |
scientific article; zbMATH DE number 5121325 |
Statements
Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices (English)
0 references
2 February 2007
0 references
mesh generation
0 references
template
0 references
tetrahedral mesh
0 references
octrees
0 references
semiconductor device simulation
0 references
0.80398124
0 references
0.7989821
0 references
0.7922639
0 references
0.79142797
0 references
0.79057777
0 references
0.7871679
0 references
